Abstract Paper
Journal of
Functional Materials and Bio-molecules
Title | : Investigation of Thickness and Temperature variation on Band Gap of Tellurium thin film on silicon substrate |
---|---|
Author(s) | : Swati Arora, Y.K.Vijay |
Article Information | : Volume 1 - Issue 2 (November - 2017) , 54-56 |
Affiliation(s) | : 1 Swami Keshvanand Institute of Technology, Management &Gramothan, Jaipur, India-302017. |
: 2 Department of Physics, Vivekananda Global University, Jaipur, India – 302012 |
Abstract :
<p>Tellurium (Te) thin films of various thickness (200nm, 275nm, 350nm & 500nm) were prepared on Silicon (Si) substrate by thermal evaporation method under the vacuum of about〖10〗^(-5) torr Using vacuum coating unit. It is observed that the resistivity decreases exponentially with the Increases Temperature. A direct band gap between 0.368 eV to 0.395 eV is obtained at different temperatures with Four Probe Method which shows that when we increase the thickness of material the band gap will exponentially decreases. Samples were studied by X-ray diffraction (XRD), and atomic force microscopy (AFM) to obtain comprehensive and consistent micro structural information.<br></p>
Keywords | : Thermal evaporation, Vacuum coating unit, Four Probe Method |
---|---|
Document Type | : Research Paper |
Publication date | : November 06, 2017 |