Abstract Paper
| Title | : Structural, Magneto-transport and Strain induced Anomalous Hall effect properties of Ni-MnGa Nanocrystalline Thin Films |
|---|---|
| Author(s) | : K. Kamala Bharathi |
| Article Information | : Volume 2 - Issue 1 (June - 2018) , 14-17 |
| Affiliation(s) | : Department of Physics, Research Institute, SRM Institute of Science and Technology, Kattankulathur, Chennai |
Abstract :
Nanocrystalline Ni-Mn-Ga films were prepared employing DC sputtering method and their structural, electrical and magneto-transport properties were investigated. Structural investigation indicates that the film grown at the substrate temperature (Ts) of 350°C crystallizes in L21 structure. Temperature variation of electrical resistance showed an abrupt change at 240 K and at 170 K while cooling and heating respectively, which can be attributed to the martensitic transformation. Magnetoresistance of -0.03% (at 80 K) has been observed for the film grown at 350ºC. Transport properties of amorphous film indicate the typical disorder nature of the alloy. The negative extraordinary Hall coefficient (RS) is observed for the film grown at 350°C. Presence of hysteresis at room temperature reveals that the Ni-Mn-Ga film possesses the perpendicular anisotropy. Hysteresis loop become contracted at 80 K because of the strain mediated anisotropy at low temperature.
| Keywords | : Ni-Mn-Ga; Hall effect; Structural transformation; Magnetoresistance. |
|---|---|
| Document Type | : Research Paper |
| Publication date | : June 08, 2018 |